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Communication ICs & RF Devices

High Power SPDT Switch GaAs MMIC

  • Low voltage logic control (VCTL(H)=1.8V typ.)
  • Low voltage operation (VDD=2.7V typ.)
  • (
    Low distortion IIP3=+73dBm typ. @f=829+849MHz, PIN=24dBm
    IIP3=+73dBm typ. @f=1870+1910MHz, PIN=24dBm
    2nd/3rd harmonics=-90dBc/ 90dBc typ. @f=0.9GHz, PIN=35dBm
  • Linearity P-0.1dB=+36dBm min.)
  • Low insertion loss (0.18dB/ 0.20dB/ 0.23dB typ. @f=0.9GHz/ 1.9GHz/ 2.7GHz)
  • Ultra small & ultra thin package (QFN12-51 (Package size: 2.0 x 2.0 x 0.375mm.))
  • RoHS compliant and Halogen Free, MSL1
General Description
The NJG1802K51 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1802K51 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 2.7GHz. In addition, this switch is able to handle high power signals. For saving current consumption, the NJG1802K51 has a shutdown mode. The NJG1802K51 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin QFN12-51 package is adopted.
  • LTE, UMTS, CDMA, GSM applications
  • Post PA Switching, Antenna Switching and Bands Switching applications
  • General Purpose Switching applications
Package Information
Part Number Package OutlinePinsMaterial Declaration (RoHS/Halogen)Terminal FinishWeight(mg) (Reference)Reflow solderingFlow solderingIron solderingPacking ConditionMSLSolder Foot Print
Sample & Buy
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