Tokyo Japan, October 31, 2013 - New Japan Radio Co., Ltd. (New JRC) has introduced to the market the NJU77806, a rail to rail output single CMOS operational amplifier providing industry-leading low noise characteristic (5.5nV/√Hz typ. at f=1kHz)* consistent with low operating current of 500μA.
It also has a wide band characteristic (GBP=4.4MHz) and high RF noise immunity.* Our check as of October 2013, under 2mA current consumption class CMOS Op-Amps
The NJU77806 is a CMOS operational amplifier combining an industry-leading low noise with low operating current of 500μA. It is well-suited for an amplifier requiring low noise characteristic in a low frequency band such as amplifiers for vibration sensor using in servo system, motion sensor, measuring apparatus and microphone. The NJU77806 is also suitable for battery powered equipment requiring low operating current.
Generally operational amplifier noise characteristic is dependent on its quiescent current. It is difficult to reduce noise in circuit without increase of its operating current. Further CMOS transistor has a noise called “1/f noise” that makes it difficult to design amplifier with low noise characteristic in a low frequency band. The NJU77806 provides both industry-leading low noise and low operating current by circuit layout optimization and new low noise wafer process.
The NJU77806 offers low noise amplifier application with wide band characteristic of 4.4MHz.
In sensor amplifier application, amplifiers are easily affected by electromagnetic noises cuased by wireless LAN system and mobilephones. Therefore RF immunity is an important characteristic in this application. The NJU77806 provides RF immunity characteristic with the outstanding low noise.
|Input voltage noise||f=10Hz||11nV/√Hz|
|Operating current||500μA typ.|
|Operating voltage||single supply||1.8V to 5.5V|
|dual supply||±0.9V to ±2.75V|
|Rail-to-Rail output||(RL=10kΩ)||0.05V to 4.95V (@VDD=5V)|
|Commn mode input voltage range||VSS-0.1V to VDD-0.9V|
|Input offset voltage||2mV max.|
|Input offset voltage drift||1.5μV/°C typ.|
|High RF immunity|
|Low noise microphone amplifier|
|Photo diode amplifier|
|Shock sensor amplifier|
|Engineering Sample (ES)||Available|
|Mass Production (MP)||November, 2013|