Low Noise Amplifier with Bypass for LTE

Data Sheet


  • Operating frequencies (3300MHz to 3800MHz)
  • Low control voltage (1.3V to 5.5V)
  • Low current consumption (5.0/3.5mA typ. @ VDD=2.8/1.8V)
  • High Gain (13.5dB typ. @VDD=2.8V fRF=3500MHz)
  • Low Noise figure (1.0dB typ. @VDD=2.8V fRF=3500MHz)
  • High IIP3 (+5.0dBm typ. @VDD=2.8V, fRF=3500MHz+3510MHz)
  • Insertion loss in bypass mode (3.5dB typ. @VDD=2.8V, fRF=3500MHz)
  • Ultra-small package size (EPFFP6-X2 (1.1mm x 0.7mm x 0.37mm typ.))
  • RoHS compliant and Halogen Free, MSL1

General Description

NJG1173UX2 is low noise amplifier with bypass switch for LTE, which covers frequency from 3300MHz to 3800MHz. NJG1173UX2 is able to select LNA active mode or bypass mode by low control voltage. This LNA achieves low noise figure and high linearity. Integrated ESD protection device on each port achieves excellent ESD robustness. A very small and ultra-thin package EPFFP6-X2 is adopted.


  • LTE receive application
  • WiMAX 3.5GHz receive application
  • RF front-end modules, smartphones, data cards and others mobile application

Package Information

Part NumberPackage OutlinePinsMaterial Declaration (RoHS/Halogen)Terminal FinishWeight(mg) (Reference)Reflow solderingFlow solderingIron solderingPacking ConditionMSLSolder Foot Print
NJG1173UX2EPFFP6-X26Cu/Ni/Au0.7Yes--Non dry pack1

Sample & Buy

Part NumberPackagesStatusPacking SpecificationSampleBuy
NJG1173UX2EPFFP6-X2(Active)Contact UsSales Support