Low Noise Amplifier with Bypass for LTE

Data Sheet


  • Operating frequencies (1805 to 2200MHz, 2300 to 2690MHz)
  • Operating voltage (1.5 to 3.3V)
  • Low current consumption (4.8/4.0mA typ. @ VDD=2.8/1.8V)
  • High Gain (15.0/14.5dB typ. @VDD=2.8V, f=2000/2500MHz)
  • Low Noise figure (0.7/0.8dB typ. @VDD=2.8V, f=2000/2500MHz)
  • High IIP3 (+2.0/+3.5dBm typ. @VDD=2.8V, f=2000/2500MHz)
  • Insertion loss in bypass mode (3.0dB typ. @VDD=2.8V, f=2000/2500MHz)
  • Ultra Small package size (EPFFP6-X2 (Package size: 1.1mm x 0.7mm x 0.37mm typ.))
  • RoHS compliant and Halogen Free
  • MSL1

General Description

NJG1170UX2 is low noise amplifier with bypass switch for LTE which covers frequency from 1805 to 2200MHz and from 2300 to 2690MHz. The NJG1170UX2 has a LNA pass-through function to select LNA active mode or bypass mode, and this IC achieves high gain, low noise figure and high linearity. Integrated ESD protection device on each port achieves excellent ESD robustness. A very small and ultra-thin package of EPFFP6-X2 is adopted.


  • LTE reception application
  • RF front-end module, smartphone, data card and others mobile application

Package Information

Part NumberPackage OutlinePinsMaterial Declaration (RoHS/Halogen)Terminal FinishWeight(mg) (Reference)Reflow solderingFlow solderingIron solderingPacking ConditionMSLSolder Foot Print
NJG1170UX2EPFFP6-X26Cu/Ni/Au0.7Yes--Non dry pack1

Sample & Buy

Part NumberPackagesStatusPacking SpecificationSampleBuy
NJG1170UX2EPFFP6-X2(Active)Contact UsSales Support