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Communication ICs & RF Devices
NJG1812ME4

High Power DPDT Switch GaAs MMIC

Features
  • Low voltage logic control (VCTL(H)=1.35V to 5.0V)
  • Low voltage operation (VDD=2.7V typ.)
  • Low insertion loss (
    0.25dB typ. @f=900MHz, PIN=+35dBm
    0.35dB typ. @f=1900MHz, PIN=+33dBm
    0.45dB typ. @f=2700MHz, PIN=+27dBm)
  • Low distortion (
    2nd harmonics=-89dBm typ. @ f=786.5MHz, PIN=+23dBm
    3rd harmonics=-89dBm typ. @ f=710MHz, PIN=+23dBm)
  • P-0.1dB (+36 dBm min.)
  • Ultra-small and ultra-thin package (EQFN12-E4 (Package size: 2.0 x 2.0 x 0.397 mm typ.))
  • RoHS compliant and Halogen Free, MSL1
General Description
The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. The NJG1812ME4 features very low insertion loss, low distortion and excellent linearity performance down to 1.8V 1bit control voltage at high frequency up to 3GHz. In addition, this switch is able to handle high power signals. The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the small & thin EQFN12-E4 package is adopted.
Applications
  • Antenna swapping, General purpose switching applications
  • LTE, UMTS, CDMA, GSM systems
Sample & Buy
Part NumberPackagesStatusPacking SpecificationSample
NJG1812ME4 EQFN12-E4 (Active) -
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