Home > Products > Semiconductor > Communication ICs & RF Devices > NJG1809ME7
Communication ICs & RF Devices
NJG1809ME7

High Power SP4T Switch GaAs MMIC

Features
  • Low voltage logic control (1.35 to 5.0V)
  • Low insertion loss (
    0.40dB typ. @f=2.7GHz, 3.5GHz, PIN=+27dBm
    0.50dB typ. @f=5.85GHz, PIN=+27dBm)
  • High isolation (
    27dB typ. @f=2.7GHz, PIN=+27dBm
    25dB typ. @f=3.5GHz, PIN=+27dBm
    30dB typ. @f= 5.85GHz, PIN=+27dBm)
  • P-0.1dB (+32dBm min.)
  • High speed switching time 250ns typ.
  • Small and thin package (EQFN18-E7 (2.0x2.0x0.397mm typ.))
  • RoHS compliant and Halogen Free, MSL1
General Description
The NJG1809ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion loss and high isolation up to 6GHz and excellent linearity performance with 1.8V control voltage. This switch achieves high speed switching time for WLAN application. Integrated ESD protection device on each port achieves excellent ESD robustness. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. The small and thin EQFN18-E7 package is adopted.
Applications
  • LTE-U / LAA, WLAN (802.11a/b/g/n/ac), LTE multi-mode applications
  • General purpose switching applications
Sample & Buy
Part NumberPackagesStatusPacking SpecificationSample
NJG1809ME7 EQFN18-E7 (Active)
PageTop