New Japan Radio's analog master slice is preparing the type of transistor array which combines integrated transistors, resistors, capacitors as well as individual devices. In addition two types of macro-cell which combines New Japan Radio's standard Op Amps.Our customers are offered various options as shown above.Please refer to below for more detailed information.

Transistor Array Type
Transistor Array Type TA-1-2-4
(Released)
TA-1-1-3
(Prototype)
TA-1-4-8
(Under Planning)
 
Wafer Process High-Voltage 5inch Bipolar
Maximum Supply Voltage 43V
Maximum Operating Voltage 40V
Operating Temperature Range -40 to +125°C
Number of Block 8 3 32
Number of NPN BJT 368 138 1472
Number of LPNP BJT 352 132 1408
Number of LR-POL Resistor
(one-element=125Ω)
1840 714 7168
Number of HR-POL Resistor
(one-element=5kΩ)
1744 654 6976
Number of MOS Capacitor
(one-element=5pF)
16 6 64
Changeable Mask Layers
for Interconnect
3-Layers(AL,VIA,AL2)
Package LQFP48 DIP16
SSOP20/24/32
COB
Application •Automotive;Body Control
•Industrial;Sensor AFE(Analog Front End)
Macrocell Type
Macrocell Type MC-1-3-3
(To be Confirm)
MC-1-1-0
(Under Planning)
MC-1-4-4
(Under Planning)
 
Wafer Process High-Voltage 5inch Bipolar
Maximum Supply Voltage 43V
Maximum Operating Voltage 40V
Operating Temperature Range -40 to +125°C
Number of Opamp Cell NJM2904 Type:3
NJM4558 Type:3
NJM2904 Type:1
NJM4558 Type:0
NJM2904 Type:4
NJM4558 Type:4
Number of NPN BJT 12 4 20
Number of LPNP BJT 12 4 20
Number of HR-POL Resistor
(one-element=5kΩ)
375 75 500
Number of HR-POL Resistor
(one-element=10kΩ)
72 12 96
Number of HR-POL Resistor
(one-element=20kΩ)
72 12 96
Number of HR-POL Resistor
(one-element=40kΩ)
72 12 96
Number of HR-POL Resistor
(one-element=80kΩ)
72 12 96
Number of MOS Capacitor
(one-element=8pF)
16 12 32
Changeable Mask Layers
for Interconnect
3-Layers(AL,VIA,AL2)
Package LQFP48 DIP14/16
SSOP14/16
COB
Application •Audio;Pre-Amp
•Consumer;Sensor AFE(Analog Front End)

Circuit Diagram

Circuit Diagram